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魏进
魏进
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https://www.docin.com/renren_221711099
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魏进
https://www.docin.com/renren_221711099

他还没有介绍自己~

私信
魏进
  • 文档 17
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  • 总浏览量 857
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最近上架的文档

JApplPhys83,3656(1998),Scattering of electrons at threading dislocations in GaN 4 p
JApplPhys83,3656(1998),Scattering of electrons at threading dislocations in GaN
ApplPhysLettt97,242107(2010),Distinguishing impurity concentrations in GaAs and AlGaAs using very shallow undoped heterostructures 3 p
ApplPhysLettt97,242107(2010),Distinguishing impurity concentrations in GaAs and AlGaAs using very shallow undoped heterostructures
ApplPhysLett77,250(2000),Polarization effects, surface states, and the source of electrons in AlGaNÕGaN heterostructure field effect transistors 3 p
ApplPhysLett77,250(2000),Polarization effects, surface states, and the source of electrons in AlGaNÕGaN heterostructure field effect transistors
ApplPhysLett71,2794(1997)Measurement of piezoelectrically induced charge in GaNAlGaN heterostructure field-effect transistors 3 p
ApplPhysLett71,2794(1997)Measurement of piezoelectrically induced charge in GaNAlGaN heterostructure field-effect transistors
JApplPhys85,3222(1999),Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaNGaN heterostructures 12 p
JApplPhys85,3222(1999),Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaNGaN heterostructures
Characteristics and design of metal vacuum arc plasma source power supply for pulsed mode plasma immersion ion implantationt 3 p
Characteristics and design of metal vacuum arc plasma source power supply for pulsed mode plasma immersion ion implantationt
COMPOUND_SEMICONDUCTOR_ELEMENT_RESISTIBL 7 p
COMPOUND_SEMICONDUCTOR_ELEMENT_RESISTIBL
COMPARISON OF Si, GaAs, Sic AND GaN FET-TYPE SWITCHES FOR PUSLED power applications 4 p
COMPARISON OF Si, GaAs, Sic AND GaN FET-TYPE SWITCHES FOR PUSLED power applications
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