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最近上架的文档

Low resistance GaNInGaNGaN tunnel junctions 6 p
Low resistance GaNInGaNGaN tunnel junctions
A development of the LED TMGa precursor reuse technology 4 p
A development of the LED TMGa precursor reuse technology
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays 7 p
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Enhancement in light extraction of LEDs with SiO2 current blocking layer deposited on naturally textured p-GaN surface 4 p
Enhancement in light extraction of LEDs with SiO2 current blocking layer deposited on naturally textured p-GaN surface
Improved carrier injection and efficiency droop in InGaN GaN light emitting diodes with step stage multiple quantum well structure and hole blocking barriers已讲 5 p
Improved carrier injection and efficiency droop in InGaN GaN light emitting diodes with step stage multiple quantum well structure and hole blocking barriers已讲
Improvement of efficiency and electrical properties using intentionally formed V shaped pits in InGaN GaN multiple quantum well light emitting diodes 5 p
Improvement of efficiency and electrical properties using intentionally formed V shaped pits in InGaN GaN multiple quantum well light emitting diodes
Effect of Thickness of the p-AlGaN Electron Blocking 3 p
Effect of Thickness of the p-AlGaN Electron Blocking
Improvement of efficiency of GaN-based polarization-doped light-emitting 3 p
Improvement of efficiency of GaN-based polarization-doped light-emitting
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