【17页精品】High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy
本文档由 英语科技论文 分享于2012-03-29 10:32
Abstract: Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiCweregrownsystematically, with resistivity \geq 109{\Omega}-cmby maintaininghigh C/Si ratios 1.3-15 during growth.Comparison of secondary ion mass spectrabetweenlow-dopedepilayers grown at C/Si ratio<1.3andSI-epilayers grown ..
君，已阅读到文档的结尾了呢~~