Graphene field-effect transistors based on boron nitride gate dielectrics
本文档由 英语科技论文 分享于2012-03-19 14:16
Abstract: Graphene field-effect transistors are fabricated utilizing single-crystalhexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gatedielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec andcurrent saturation down to 500 nm channel lengths with intrinsictransconductance values above 400 mS/mm. The w..
君,已阅读到文档的结尾了呢~~