Process modeling and device technology of GaN normally-off power transistors
本文档由 学海书城 分享于2011-10-31 07:13
The wide bandgap GaN-based transistors are attractive for power electronics applications owing to the superior intrinsic properties of the materials. In addition to the breakdown electric-field that is one order of magnitude higher than the mainstream semiconductor silicon, GaN-based heterostructrues (e.g. AlGaN/GaN) enhanced by spontaneous and piezoel..
下载文档
收藏
打印
君,已阅读到文档的结尾了呢~~